The part number "IPD35N10S3L-26" corresponds to a power MOSFET manufactured by Infineon Technologies. It is a N-channel MOSFET designed for high-voltage applications. This device is typically used in power conversion circuits, motor control, and various power regulation tasks.
To provide a thorough response, here’s a breakdown of the requested specifications and explanations:
1. Pin Function Specification
The IPD35N10S3L-26 device typically comes in a TO-220 package. Below is a detailed explanation of the pin functions, assuming it's in a TO-220 package:
TO-220 Package Pinout:Pin 1: Gate (G)
Function: This is the gate pin of the MOSFET. A voltage applied to this pin controls the flow of current between the Drain (D) and Source (S) pins. A positive voltage turns the MOSFET on, allowing current to flow, while a voltage near 0V turns it off.
Pin 2: Drain (D)
Function: The drain is the current-carrying terminal of the MOSFET. The voltage at this pin is typically the highest voltage in the circuit, and current flows from the Drain to the Source when the MOSFET is turned on.
Pin 3: Source (S)
Function: The source is the terminal from which current flows into the MOSFET when it is turned on. It typically connects to ground or the negative side of the circuit in most applications.
2. Pin Count and Detailed Description
The IPD35N10S3L-26 device, in the case of a TO-220 package, only has 3 pins. Therefore, there are only 3 pins to describe, and no further breakdown for 200 pins or more is necessary for this specific device.
Pin Function Table:
Pin Number Pin Name Description Function Pin 1 Gate (G) Controls the MOSFET's switching between on and off. Used to switch the MOSFET on or off. Pin 2 Drain (D) The output terminal of the MOSFET. Current flows through the drain when MOSFET is on. Pin 3 Source (S) The input terminal of the MOSFET. Current enters the MOSFET through the source.3. Pin Function Frequently Asked Questions (FAQ)
Q1: What is the maximum gate voltage for the IPD35N10S3L-26?A1: The maximum gate voltage for the IPD35N10S3L-26 is ±20V. Exceeding this voltage may damage the gate oxide.
Q2: How does the gate voltage control the MOSFET's operation?A2: A positive gate voltage turns the MOSFET on, allowing current to flow between Drain and Source. A gate voltage of 0V turns the MOSFET off.
Q3: Can the source pin be connected to ground?A3: Yes, typically in most applications, the Source pin is connected to ground or the negative side of the circuit.
Q4: What is the drain-to-source voltage (Vds) rating of the IPD35N10S3L-26?A4: The IPD35N10S3L-26 has a Drain-Source Voltage rating of 100V.
Q5: What is the maximum drain current for the IPD35N10S3L-26?A5: The device can handle a maximum drain current of 35A.
Q6: What are the typical uses of this MOSFET?A6: The IPD35N10S3L-26 is commonly used in power conversion, motor control, and various power regulation circuits.
Q7: How can I calculate the gate charge for this device?A7: The gate charge is given in the datasheet, typically measured in nanoCoulombs (nC). For this device, the gate charge is approximately 70nC.
Q8: Can I use this MOSFET in high-frequency applications?A8: Yes, but make sure to check the switching characteristics to ensure it's suitable for the specific high-frequency application.
Q9: What is the thermal resistance of the IPD35N10S3L-26?A9: The thermal resistance for the IPD35N10S3L-26 is approximately 62.5°C/W when mounted on a suitable heatsink.
Q10: What is the total gate charge (Qg) of the IPD35N10S3L-26?A10: The total gate charge (Qg) is approximately 70nC.
Q11: How do I protect the MOSFET from overvoltage?A11: You can use a clamping diode or a transient voltage suppressor ( TVS ) diode across the gate to prevent overvoltage.
Q12: What is the maximum power dissipation for the IPD35N10S3L-26?A12: The maximum power dissipation for this MOSFET is typically 150W, depending on the specific operating conditions.
Q13: How do I calculate the on-resistance (Rds(on)) of the IPD35N10S3L-26?A13: The on-resistance (Rds(on)) is provided in the datasheet, typically around 0.05Ω at Vgs = 10V.
Q14: Can I use the IPD35N10S3L-26 in low-voltage applications?A14: This device is optimized for higher-voltage operations, typically up to 100V. For lower-voltage applications, consider a MOSFET with a lower voltage rating.
Q15: What is the threshold voltage (Vgs(th)) for turning on the MOSFET?A15: The threshold voltage (Vgs(th)) for the IPD35N10S3L-26 is typically 3V to 4V.
Q16: Is there a recommended gate resistor for this MOSFET?A16: It’s recommended to use a gate resistor to limit the inrush current. A typical value could be 10Ω to 100Ω.
Q17: How do I connect the MOSFET for switching purposes?A17: Connect the Source to ground, the Drain to the load, and the Gate to a driving circuit that provides the control voltage.
Q18: Does this MOSFET have built-in protection?A18: The IPD35N10S3L-26 has intrinsic body diodes, but additional external protections may be necessary depending on your application.
Q19: Can this MOSFET handle inductive loads?A19: Yes, but you should include a flyback diode to protect the MOSFET from voltage spikes in inductive load switching.
Q20: Is this device suitable for automotive applications?A20: Yes, the IPD35N10S3L-26 can be used in automotive applications, especially for DC-DC converters or motor drives, but check the operating temperature range for your specific use case.
This covers the Pin Function Specifications, FAQ, and other detailed aspects of the IPD35N10S3L-26 MOSFET. The explanation is complete within the device's limitations, and further details can be referenced from the datasheet for application-specific parameters.
